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NT5CB1024M4BN - Nanya

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NT5CB1024M4BN 4Gb DDR3 SDRAM B-Die

The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 4,294,967,296 bits. It is internally configured as an octal-bank DRAM. The 4Gb chip is organized as 128Mbit x 4 I/O x 8 bank , 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks. These synchronous devices achieve high speed double-data-rate transfer rates of u.

Features

and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA packages. 2 REV 1.0 01/ 2012 Free Datasheet http://www.0PDF.com 4Gb DDR3 SDRAM B-Die NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M1.

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