NT5CB256M4AN - Nanya

NT5CB256M4AN 1Gb DDR3 SDRAM A-Die

The 1Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 1,073,741,824 bits. It is internally configured as an octal-bank DRAM. The 1Gb chip is organized as 32Mbit x 4 I/O x 8, 16Mbit x 8 I/O x 8 bank or 8Mbit x 16 I/O x 8 bank device. These synchronous devices achieve high speed double-data-rate transfer rates of up t.

Features

and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.75V power supply and are available in BGA packages. REV 1.2 01 / 2009 1 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Pin Configuration
  – 78 balls BGA Package (x4) < TOP View> See the balls through the package 1 VSS VSS .