NT5CB128M16HP 2Gb DDR3 SDRAM H-Die Datasheet

NT5CB128M16HP 2Gb DDR3 SDRAM H-Die

The 2Gb Double-Data-Rate-3 (DDR3(L)) H-die DRAM is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAMs. The 2Gb chip is organized as 16Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications. Th.

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and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available in BGA packages. 3 REV 1.4 02 /2013 © NANYA TECHNOLOGY CORP. All rights reserved NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. Free.

No.	Partie #	Fabricant	Description
1	NT5CB128M16BP	Nanya	2Gb DDR3 SDRAM B-Die
2	NT5CB128M16FP	Nanya	Industrial and Automotive DDR3(L) 2Gb SDRAM
3	NT5CB128M16IP	Nanya	Industrial and Automotive DDR3(L) 2Gb SDRAM
4	NT5CB128M16JR	Nanya	Commercial and Industrial DDR3(L) 2Gb SDRAM
5	NT5CB128M8AN	Nanya	1Gb DDR3 SDRAM A-Die
6	NT5CB128M8DN	Nanya	1Gb DDR3 SDRAM
7	NT5CB128M8FN	Nanya	1Gb SDRAM
8	NT5CB128M8GN	Nanya	Industrial and Automotive DDR3(L) 1Gb SDRAM
9	NT5CB1024M4BN	Nanya	4Gb DDR3 SDRAM B-Die
10	NT5CB1024M4CN	Nanya	4Gb DDR3 SDRAM C-Die
11	NT5CB256M16BP	Nanya	4Gb DDR3 SDRAM B-Die
12	NT5CB256M16CP	Nanya	Industrial and Automotive DDR3(L) 4Gb SDRAM

NT5CB128M16HP - Nanya

NT5CB128M16HP 2Gb DDR3 SDRAM H-Die

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