NSR0240V2T1G - ON Semiconductor

NSR0240V2T1G Schottky Barrier Diode

NSR0240V2T1G, NSVR0240V2T1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0240V2 in a SOD−523 miniature package enables designers to meet the challenging task of achieving high.

Features

 Very Low Forward Voltage Drop − 480 mV @ 100 mA
 Low Reverse Current − 0.2 mA @ 25 V VR
 250 mA of Continuous Forward Current
 Power Dissipation of 200 mW with Minimum Trace
 Very High Switching Speed
 Low Capacitance − CT = 4 pF
 AEC Qualified and PPAP Capable
 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
 This is a Pb−Free Device
* Typical Applications
 LCD and Keypad Backlighting
 Camera Photo Flash
 Buck and Boost dc−dc Converters
 Reverse Voltage and Curren.