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NSR0240P2 - ON Semiconductor

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NSR0240P2 Schottky Barrier Diode

SOD−923 0.80x0.60x0.37 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries.

Features


• Very Low Forward Voltage Drop − 460 mV @ 100 mA
• Low Reverse Current − 0.2 mA @ 25 V VR
• 200 mA of Continuous Forward Current
• Power Dissipation of 240 mW with Minimum Trace
• Very High Switching Speed
• Low Capacitance − CT = 7 pF
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• This is a Pb−Free Device Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection Markets
• Mobile Hand.

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