NSR0230M2T5G - ON Semiconductor

NSR0230M2T5G Schottky Barrier Diode

NSR0230M2T5G, NSVR0230M2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features  Extremely.

Features

 Extremely Fast Switching Speed
 Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 mA
 Low Reverse Current
 AEC Qualified and PPAP Capable
 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
 This is a Pb−Free Device
* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Forward Current DC Forward Current Surge Peak (60 Hz, 1 cycle) VR 30 Vdc IF 200 mA IFSM 1.0 A ESD Rating: Class 3B per Human Body Model Class C per Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratin.