monolithic dual n-channel JFETs designed for • • • • FET Input Amplifiers • Low and Medium Frequency Differential Amplifiers • Impedance Converters • Precision Instrumentation Amplifiers • Comparators ABSOLUTE MAXIMUM RATINGS (25°C) Gate-To-Gate Voltage .......... ±40V Gate-Drain or Gate-Source Voltage -40 V Gate Current .......
tput Conductance Z "a C -CO ~ Z "a C CO S Z "a C ~ 8-Pin Mini DIP See Section 5 ~ ~ G, G, 5, 5, WIN 1~ ~ "~ G, NC 0, 5, ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic 1 IGSS 1- 2 S VGS(ofO I- T ,3 A BVGSS I- T 4 C IDSS 15 15 'G VGS -;01---2 Of, 1---;0 Y 90, ,_N A - ,11 M Ciss - 12 C Crss 13 'N 14 M -~ 15 C -7 16 ~ IVGS1-V GS2 1 AIVGS1- V GS2 1 aT CMRR Gate Reverse Current (Note 1) Gate-Source Cutoff Voltage Gate-Source Breakdown Voltage Saturation Drain Current (Note 2) Gate Current (Note 1) Gate-Source Voltage Common-Source Forward Transconduct.
The NPD8301 thru NPD8303 series of N-channel monolithic dual JFETs is designed for low cost, high per- formance differe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NPD8302 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
2 | NPD8302 |
Siliconix |
dual n-channel JFET | |
3 | NPD8303 |
Siliconix |
dual n-channel JFET | |
4 | NPD8303 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
5 | NPD5564 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
6 | NPD5565 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
7 | NPD5566 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
8 | NP-BNCP |
Hirose Electric |
RFCO-AXIAL CONNECTORS | |
9 | NP-SAMC |
ON Semiconductor |
50A / Ultra Low Capacitance TSPD | |
10 | NP-SDMC |
ON Semiconductor |
High Current TSPD | |
11 | NP00402100F1HNB |
Cinetech Industrial |
Ceramic Chip Capacitors NPO Dielectric | |
12 | NP00402100F1HNR |
Cinetech Industrial |
Ceramic Chip Capacitors NPO Dielectric |