NPD5565 - National Semiconductor

NPD5565 N-Channel Monolithic Dual JFET

The 2N/NPD5564 thru 2N/NPD5566 series of N-channel monolithic dual JFETs is designed for broadband low noise differential amplifier or applications requiring dual matched moderate ON resistance analog switches. Absolute Maximum Ratings (25°o Gate-to-Gate Voltage ±40V Gate-Drain or Gate-Source Voltage -40V Gate Current 50 m A Device Dissipation (Each.

Features

ed) Gate-Reverse Current CONDITIONS V G S--20V,V DS = bvgss VGS(OFF) VGS(f) Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Saturation Drain Current Static Drain Source "ON" Resistance Common-Source Forward Transconductance (Note 1) Common-Source Output Conductance Common-Source Reverse Transfer Capacitance Common-Source Input Capacit Spot Noise Figure !G = -lMA, V DS = VdS= 15V, Dl = J nA VDS-OV, Gl = 2mA VDS= 15V, V G S = 0, (Note 1) lD= 1 mA, V G S- Vqg = 15V, Id = 2 mA Equivalent Input Noise Voltage Matching Characteristics PARAMETER CONDITIONS NPD/2N.