The 2N/NPD5564 thru 2N/NPD5566 series of N-channel monolithic dual JFETs is designed for broadband low noise differential amplifier or applications requiring dual matched moderate ON resistance analog switches. Absolute Maximum Ratings (25°o Gate-to-Gate Voltage ±40V Gate-Drain or Gate-Source Voltage -40V Gate Current 50 m A Device Dissipation (Each.
ed) Gate-Reverse Current CONDITIONS V G S--20V,V DS = bvgss VGS(OFF) VGS(f) Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Saturation Drain Current Static Drain Source "ON" Resistance Common-Source Forward Transconductance (Note 1) Common-Source Output Conductance Common-Source Reverse Transfer Capacitance Common-Source Input Capacit Spot Noise Figure !G = -lMA, V DS = VdS= 15V, Dl = J nA VDS-OV, Gl = 2mA VDS= 15V, V G S = 0, (Note 1) lD= 1 mA, V G S- Vqg = 15V, Id = 2 mA Equivalent Input Noise Voltage Matching Characteristics PARAMETER CONDITIONS NPD/2N.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NPD5564 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
2 | NPD5565 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
3 | NPD8301 |
Siliconix |
dual n-channel JFET | |
4 | NPD8301 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
5 | NPD8302 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
6 | NPD8302 |
Siliconix |
dual n-channel JFET | |
7 | NPD8303 |
Siliconix |
dual n-channel JFET | |
8 | NPD8303 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
9 | NP-BNCP |
Hirose Electric |
RFCO-AXIAL CONNECTORS | |
10 | NP-SAMC |
ON Semiconductor |
50A / Ultra Low Capacitance TSPD | |
11 | NP-SDMC |
ON Semiconductor |
High Current TSPD | |
12 | NP00402100F1HNB |
Cinetech Industrial |
Ceramic Chip Capacitors NPO Dielectric |