NP55N055SUG - Renesas

NP55N055SUG MOS FIELD EFFECT TRANSISTOR

The NP55N055SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP55N055SUG TO-252 (MP-3ZK) FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 28 A) • Low Ciss: Ciss = 3500 pF TYP. (TO-252) ABSOLUTE .

Features

• Channel temperature 175 degree rating
• Super low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 28 A)
• Low Ciss: Ciss = 3500 pF TYP. (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±55 ±220 Total Power Dissipation (TC = 25°C) PT1 77 Total Power Dissipation (TA = 25°C) Channel Temperature PT2 1.2 Tch 175 Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2 Tstg −55 to.