NP55N03SUG - Renesas

NP55N03SUG MOS FIELD EFFECT TRANSISTOR

The NP55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP55N03SUG-E1-AY Note NP55N03SUG-E2-AY Note Pure Sn (Tin) Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode.) PACKAGE TO-252 (MP-3ZK) typ. 0.27 g FEATURES.

Features

• Channel temperature 175 degree rated
• Low on-state resistance RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 28 A)
• Low input capacitance Ciss = 3500 pF TYP. (VDS = 25 V) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±55 ±220 A A Total Power Dissipation (TC = 25°C) PT1 77 W Total Power Dissipation (TA = 25°C) PT2 1.2 W Channel Temperature Tch 175 °C Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalan.