NP55N04SLG - Renesas

NP55N04SLG MOS FIELD EFFECT TRANSISTOR

The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Channel temperature 175 degree rating • Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A) • Low input capacitance • G.

Features

• Channel temperature 175 degree rating
• Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A)
• Low input capacitance
• Gate to Source ESD protection diode built-in Ordering Information Part No. LEAD PLATING PACKING NP55N04SLG-E1-AY ∗1 NP55N04SLG-E2-AY ∗1 Pure Sn (Tin) Tape 2500 p/reel Note: ∗1. Pb-free (This product does not contain Pb in external electrode.) Package TO-252 (MP-3ZK) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) .