NP4886BD6 - natlinear

NP4886BD6 40V Dual N-Channel Enhancement Mode MOSFET

Schematic diagram The NP4886BD6 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. General Features  VDS =40V，ID =20A RDS(ON)=14mΩ (typical) @ VGS=10V RDS(ON)=18mΩ (typical) @ VGS=4.5V  Excellent gate charge x RDS(ON) product(FOM)  Ver.

Features

 VDS =40V，ID =20A RDS(ON)=14mΩ (typical) @ VGS=10V RDS(ON)=18mΩ (typical) @ VGS=4.5V  Excellent gate charge x RDS(ON) product(FOM)  Very low on-resistance RDS(ON)  150 °C operating temperature  Pb-free lead plating  100% UIS tested Marking and pin assignment Application  DC/DC Converter  Ideal for high-frequency switching and synchronous rectification Package  PDFN5
*6-8L-B Note： XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP4886BD6-G Storage Temperature -55°C to +150°C Package PDFN5
*6-8L-B Devices Per Reel 5000 Absolute Maximum Ratings (TA=25℃ un.