Schematic diagram The NP4822SR uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. D1 G1 D2 G2 General Features VDS =60V,ID =9A RDS(ON)=11.5mΩ (typical) @ VGS=10V RDS(ON)=15mΩ (typical) @ VGS=4.5V Excellent gate charge x RDS(ON) prod.
VDS =60V,ID =9A RDS(ON)=11.5mΩ (typical) @ VGS=10V RDS(ON)=15mΩ (typical) @ VGS=4.5V Excellent gate charge x RDS(ON) product(FOM) Very low on-resistance RDS(ON) 150 °C operating temperature Pb-free lead plating S1 S2 Marking and pin assignment Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification Package SOP-8 XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP4822SR-G Storage Temperature -55°C to +150°C Package SOP-8 Devices Per Reel 4000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Drain.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NP4803SR |
natlinear |
30V Dual P-Channel Enhancement Mode MOSFET | |
2 | NP4886BD6 |
natlinear |
40V Dual N-Channel Enhancement Mode MOSFET | |
3 | NP4886SR |
natlinear |
40V Dual N-Channel Enhancement Mode MOSFET | |
4 | NP48N055CLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
5 | NP48N055DLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
6 | NP48N055ELE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
7 | NP48N055KLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
8 | NP48N055MLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
9 | NP48N055NLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
10 | NP4008SR |
natlinear |
40V N-Channel Enhancement Mode MOSFET | |
11 | NP40N055CLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
12 | NP40N055DLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR |