NP4803SR - natlinear

NP4803SR 30V Dual P-Channel Enhancement Mode MOSFET

Schematic diagram The NP4803SR uses advanced trench technology to provide excellent RDS(ON) ，low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =-30V，ID =-5A RDS(ON)(Typ.)=38mΩ @VGS=-10V RDS(ON)(Typ.)=51mΩ @VGS=-4.5V  High power and current handi.

Features

 VDS =-30V，ID =-5A RDS(ON)(Typ.)=38mΩ @VGS=-10V RDS(ON)(Typ.)=51mΩ @VGS=-4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Marking and pin assignment Application  PWM applications  Load switch Package  SOP-8 XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP4803SR-G Storage Temperature -55°C to +150°C Package SOP-8 Devices Per Reel 4000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage parameter Drain Current-Continuous (Silicon Limited) Pulsed Drain.