Schematic diagram The NP2N7002 has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications General Features VDS =60V,ID =300mA RDS(ON)(Typ.)=2Ω @VGS=10V RDS(ON)(Typ.)=2.5Ω @VGS=4.5V High power and current handing capability Lead fr.
VDS =60V,ID =300mA RDS(ON)(Typ.)=2Ω @VGS=10V RDS(ON)(Typ.)=2.5Ω @VGS=4.5V High power and current handing capability Lead free product is acquired Surface mount package ESD Rating: 2000V HBM Application PWM applications Load switch Package SOT-23-3L Marking and pin assignment SOT-23-3L (TOP VIEW) D 3 NP7002 1 2 G S Ordering Information Part Number NP2N7002EMR-G Storage Temperature -55°C to +150°C Package SOT-23-3L Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Continuous Drain Current Maximum power dissipa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NP2N11MR |
natlinear |
100V N-Channel Enhancement Mode MOSFET | |
2 | NP200S15LL |
natlinear |
150V N-Channel Enhancement Mode MOSFET | |
3 | NP2012 |
natlinear |
20V N-Channel Enhancement Mode MOSFET | |
4 | NP20N10YDF |
Renesas |
N-Channel MOSFET | |
5 | NP20P04SLG |
Renesas |
P-Channel Power MOSFET | |
6 | NP20P06SLG |
Renesas |
P-channel Power MOSFET | |
7 | NP20P06YLG |
Renesas |
N-Channel Power MOSFET | |
8 | NP22N055HHE |
Renesas |
N-Channel Power MOSFET | |
9 | NP22N055HLE |
Renesas |
N-Channel Power MOSFET | |
10 | NP22N055IHE |
Renesas |
N-Channel Power MOSFET | |
11 | NP22N055ILE |
Renesas |
N-Channel Power MOSFET | |
12 | NP22N055SHE |
Renesas |
N-Channel Power MOSFET |