NP2N11MR - natlinear

NP2N11MR 100V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP2N11MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. D G General Features  VDS =110V，ID =2A RDS(ON)(Typ.)=220mΩ @VGS=10V RDS(ON)(Typ.)=240mΩ @VGS=4.5V  High power.

Features

 VDS =110V，ID =2A RDS(ON)(Typ.)=220mΩ @VGS=10V RDS(ON)(Typ.)=240mΩ @VGS=4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Application  PWM applications  Load switch S Marking and pin assignment SOT-23-3L (TOP VIEW) D 3 NP2N11 Package  SOT-23-3L 1 2 G S Ordering Information Part Number NP2N11MR-G Storage Temperature -55°C to +150°C Package SOT-23-3L Devices Per Reel 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Drain current-continuous@Tj=125℃ -puls.