NP12N30G - natlinear

NP12N30G 300V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.It can be used in a wide variety of applications. General Features  VDS =300V，ID =12A RDS(ON)(Typ.)= 250mΩ @VGS=10V  High density cell design for ultra low Rdson Marking and pin assignment  Fully characterized avalanche voltage and curre.

Features

 VDS =300V，ID =12A RDS(ON)(Typ.)= 250mΩ @VGS=10V  High density cell design for ultra low Rdson Marking and pin assignment  Fully characterized avalanche voltage and current  Good stability and uniformity with high EAS  Excellent package for good heat dissipation Application  Automotive applications  Hard switched and high frequency circuits  Uninterruptible power supply Package  TO-252-2L XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP12N30G-G Storage Temperature -55°C to +150°C Package TO-252-2L Devices Per Reel 2500 Absolute Maximum Rating.