Schematic diagram The NP100P02D6 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications General Features VDS =-20V,ID =-100A RDS(ON)(Typ.)=2.5mΩ @VGS=-4.5V RDS(ON)(Typ.)=3mΩ @VGS=-2.5V High power and current handing capability Lead free product is acquired Surface mount.
VDS =-20V,ID =-100A RDS(ON)(Typ.)=2.5mΩ @VGS=-4.5V RDS(ON)(Typ.)=3mΩ @VGS=-2.5V
High power and current handing capability Lead free product is acquired Surface mount package 150 °C operating temperature 100% UIS tested
Marking and pin assignment
Application
PWM applications Load switch Uninterruptible power supply
Package
PDFN5
*6-8L-A
XXXX—Wafer Information YYYYY—Quality Code
Ordering Information
Part Number NP100P02D6-G
Storage Temperature -55°C to +150°C
Package PDFN5
*6-8L-A
Devices Per Reel 5000
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
parameter.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NP100P04PDG |
NEC |
MOS FIELD EFFECT TRANSISTOR | |
2 | NP100P04PLG |
NEC |
MOS FIELD EFFECT TRANSISTOR | |
3 | NP100P06PDG |
Renesas |
P-channel Power MOSFET | |
4 | NP100P06PDG |
NEC |
MOS FIELD EFFECT TRANSISTOR | |
5 | NP100P06PLG |
NEC |
MOS FIELD EFFECT TRANSISTOR | |
6 | NP100N04NUJ |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
7 | NP100N04PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
8 | NP100N055PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
9 | NP109N04PUG |
Renesas |
N-Channel Power MOSFET | |
10 | NP109N04PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
11 | NP109N055PUJ |
Renesas |
N-CHANNEL POWER MOS FET | |
12 | NP109N055PUK |
Renesas |
MOS FIELD EFFECT TRANSISTOR |