NP120N03D6 - natlinear

NP120N03D6 30V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP120N03D6 uses Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) . This device is ideal for high-frequency switching and synchronous rectification. General Features  .

Features

 VDS =30V，ID =120A RDS(ON)(Typ.)= 2.1mΩ @VGS=10V RDS(ON)(Typ.)= 2.9mΩ @VGS=4.5V  Very low on-resistance RDS(on)  150 °C operating temperature  100% UIS tested Marking and pin assignment Application  Synchronus Rectification in DC/DC and AC/DC Converters  Industrial and Motor Drive applications XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP120N03D6-G Storage Temperature -55°C to +150°C Package PDFN5
*6-8L-A Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Continuous Drain Current TC=25°C .