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MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK for Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Electrically Similar to Popular .
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Electrically Similar to Popular MJE340 and MJE350
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Total Power Dissipation
@ TC = 25°C Derate above 25°C
VCEO VCB VEB IC IC.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NJVMJD3055T4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 2 | NJVMJD31CT4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 3 | NJVMJD31T4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 4 | NJVMJD32CT4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 5 | NJVMJD32T4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 6 | NJVMJD350T4G |
ON Semiconductor |
High Voltage Power Transistors |
|
| 7 | NJVMJD122 |
ON Semiconductor |
Complementary Darlington Power Transistor |
|
| 8 | NJVMJD127 |
ON Semiconductor |
Complementary Darlington Power Transistor |
|
| 9 | NJVMJD2955T4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 10 | NJVMJD44E3T4G |
ON Semiconductor |
Darlington Power Transistor |
|
| 11 | NJVMJD47T4G |
ON Semiconductor |
High Voltage Power Transistors |
|
| 12 | NJVMJD50T4G |
ON Semiconductor |
High Voltage Power Transistors |
|