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MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and T.
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Surface Mount Replacements for 2N6040−2N6045 Series,
TIP120−TIP122 Series, and TIP125−TIP127 Series
• Monolithic Construction With Built−in Base−Emitter Shunt Resistors
• High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings:
♦ Human Body Model, 3B > 8000 V ♦ Machine Model, C > 400 V
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NJVMJD127 |
ON Semiconductor |
Complementary Darlington Power Transistor |
|
| 2 | NJVMJD2955T4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 3 | NJVMJD3055T4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 4 | NJVMJD31CT4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 5 | NJVMJD31T4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 6 | NJVMJD32CT4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 7 | NJVMJD32T4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 8 | NJVMJD340T4G |
ON Semiconductor |
High Voltage Power Transistors |
|
| 9 | NJVMJD350T4G |
ON Semiconductor |
High Voltage Power Transistors |
|
| 10 | NJVMJD44E3T4G |
ON Semiconductor |
Darlington Power Transistor |
|
| 11 | NJVMJD47T4G |
ON Semiconductor |
High Voltage Power Transistors |
|
| 12 | NJVMJD50T4G |
ON Semiconductor |
High Voltage Power Transistors |
|