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MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS, 20 WATTS Lead Formed for Surface Mount Applications in Plastic Sleeves .
http://onsemi.com
SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS, 20 WATTS
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Electrically Similar to MJE2955 and MJE3055 DC Current Gain Specified to 10 Amperes High Current Gain−Bandwidth Product − fT = 2.0 MHz (Min) @ IC = 500 mAdc Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NJVMJD31CT4G |
ON Semiconductor |
Complementary Power Transistors |
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| 2 | NJVMJD31T4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 3 | NJVMJD32CT4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 4 | NJVMJD32T4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 5 | NJVMJD340T4G |
ON Semiconductor |
High Voltage Power Transistors |
|
| 6 | NJVMJD350T4G |
ON Semiconductor |
High Voltage Power Transistors |
|
| 7 | NJVMJD122 |
ON Semiconductor |
Complementary Darlington Power Transistor |
|
| 8 | NJVMJD127 |
ON Semiconductor |
Complementary Darlington Power Transistor |
|
| 9 | NJVMJD2955T4G |
ON Semiconductor |
Complementary Power Transistors |
|
| 10 | NJVMJD44E3T4G |
ON Semiconductor |
Darlington Power Transistor |
|
| 11 | NJVMJD47T4G |
ON Semiconductor |
High Voltage Power Transistors |
|
| 12 | NJVMJD50T4G |
ON Semiconductor |
High Voltage Power Transistors |
|