Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 µm gate length for increased linear gain. technology. The device incorporates WSi (tungsten silicide) gate for high reliability and SiO2 glassivation for stabil.
• High output power
• High gain
• High power added efficiency
• Internally matched input
• High reliability
2.4
0.1 4.5 MAX
1.8 0.2 MAX
QUALITY GRADE
Standard Please refer to “Quality grade on NEC Semiconductor Devices” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS VGD ID IG PT(
*) Tch Ts.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NES240-24 |
DENSEI-LAMBDA |
DIN rail mountable type 30 ~ 240W |
|
| 2 | NES240-28 |
DENSEI-LAMBDA |
DIN rail mountable type 30 ~ 240W |
|
| 3 | NES240-48 |
DENSEI-LAMBDA |
DIN rail mountable type 30 ~ 240W |
|
| 4 | NES2427P-45 |
NEC |
45 W S-BAND PUSH-PULL POWER GaAs MES FET |
|
| 5 | NES2427P-60 |
NEC |
60 W S-BAND PUSH-PULL POWER GaAs MES FET |
|
| 6 | NES120 |
DENSEI-LAMBDA |
DIN rail mountable type 30 ~ 240W |
|
| 7 | NES1821B-30 |
NEC |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
|
| 8 | NES1823P-100 |
NEC |
100W L-BAND PUSH-PULL POWER GaAs MESFET |
|
| 9 | NES1823P-140 |
NEC |
140 W L / S-BAND PUSH-PULL POWER GaAs MES FET |
|
| 10 | NES1823P-30 |
NEC |
30 W L-S BAND PUSH-PULL POWER GaAs MES FET |
|
| 11 | NES1823P-45 |
NEC |
45 W L / S-BAND PUSH-PULL POWER GaAs MES FET |
|
| 12 | NES1823P-50 |
NEC |
50 W L-BAND PUSH-PULL POWER GaAs MES FET |
|