NES1823P-100 - NEC

NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET

The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching. The device employs Tungsten Sil.

Features

• Push-pull type N-channel GaAs MESFET
• High Output Power : 100 W TYP.
• High Linear Gain : 11.0 dB TYP.
• High Drain Efficiency: 50 % TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHz ORDERING INFORMATION (PLAN) Part Number NES1823P-100 T-92 Package Supplying Form ESD protective envelope Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NES1823P-100) ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Curr.