The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 2.4 to 2.7 GHz. The device employs 0.9 µm Tungsten Silicide gates, vi.
• Push-pull type N-channel GaAs MES FET
• VDS = 10.0 V operation
• High output power: PO (1 dB) = 60 W TYP.
• High linear gain: GL = 12.0 dB TYP.
• High power added efficiency: ηadd = 35 % TYP. @ VDS = 10.0 V, IDset = 12.0 A (total), f = 2.50, 2.70 GHz
ORDERING INFORMATION (PLAN)
Part Number NES2427P-60 Package T-92 Supplying Form ESD protective envelope
Remark To order evaluation samples, consult your NEC sales representative.
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device.
The information in this document is subject to chang.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NES2427P-45 |
NEC |
45 W S-BAND PUSH-PULL POWER GaAs MES FET | |
2 | NES240-24 |
DENSEI-LAMBDA |
DIN rail mountable type 30 ~ 240W | |
3 | NES240-28 |
DENSEI-LAMBDA |
DIN rail mountable type 30 ~ 240W | |
4 | NES240-48 |
DENSEI-LAMBDA |
DIN rail mountable type 30 ~ 240W | |
5 | NES2527B-30 |
NEC |
30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET | |
6 | NES120 |
DENSEI-LAMBDA |
DIN rail mountable type 30 ~ 240W | |
7 | NES1821B-30 |
NEC |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET | |
8 | NES1823P-100 |
NEC |
100W L-BAND PUSH-PULL POWER GaAs MESFET | |
9 | NES1823P-140 |
NEC |
140 W L / S-BAND PUSH-PULL POWER GaAs MES FET | |
10 | NES1823P-30 |
NEC |
30 W L-S BAND PUSH-PULL POWER GaAs MES FET | |
11 | NES1823P-45 |
NEC |
45 W L / S-BAND PUSH-PULL POWER GaAs MES FET | |
12 | NES1823P-50 |
NEC |
50 W L-BAND PUSH-PULL POWER GaAs MES FET |