NE5531079A - Renesas

NE5531079A 7.5V OPERATION SILICON RF POWER LDMOS FET

The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% power added efficiency at 460 MHz under the 7.5 V supply volt.

Features

• High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
• High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
• High linear gain : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
• Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
• Single supply : VDS = 7.5 V MAX. APPLICATIONS
• 460 MHz band radio systems
• 900 MHz band radio systems ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form NE5531079A NE5531079A-A 79A (Pb-Free) W5
• 12 m.