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NE5531079A |
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| Part Number | NE5531079A |
| Manufacturer | California Eastern Labs |
| Description | The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technol... |
| Features |
• High output power • High linear gain • Surface mount package • Single supply : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) : 5.7 5.7 1.1 mm MAX. : VDS = 7.5 V MAX. • High power added efficiency : add = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) APPLICATIONS • 460 MHz band radio systems • 900 MHz band radio systems ORDERING INFORMATION Part Number NE5531079A Order Number NE5531079A-A Package 79A (Pb-Free) Marking W5 Supplying Form • 12 mm wide embossed t... |
| Document |
 NE5531079A Data Sheet
PDF 382.84KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE5531079A |
Renesas |
7.5V OPERATION SILICON RF POWER LDMOS FET |
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| 2 | NE5532 |
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Internally-compensated dual low noise operational amplifier |
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| 3 | NE5532 |
Fairchild Semiconductor |
Dual Operational Amplifier |
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| 4 | NE5532 |
ON Semiconductor |
Internally Compensated Dual Low Noise Operational Amplifier |
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| 5 | NE5532 |
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