Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
NE5531079A |
Click to view a larger image
| Part Number | NE5531079A |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 techno... |
| Features |
• High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) • High linear gain : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) • Surface mount package : 5.7 × 5.7 × 1.1 mm MAX. • Single supply : VDS = 7.5 V MAX. APPLICATIONS • 460 MHz band radio systems • 900 MHz band radio systems ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form NE5531079A NE5531079A-A 79A (Pb-Free) W5 • 12 m... |
| Document |
 NE5531079A Data Sheet
PDF 154.22KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE5531079A |
California Eastern Labs |
SILICON POWER MOS FET |
|
| 2 | NE5532 |
Philips |
Internally-compensated dual low noise operational amplifier |
|
| 3 | NE5532 |
Fairchild Semiconductor |
Dual Operational Amplifier |
|
| 4 | NE5532 |
ON Semiconductor |
Internally Compensated Dual Low Noise Operational Amplifier |
|
| 5 | NE5532 |
Texas Instruments |
Dual Low-Noise Operational Amplifiers |
|