NDH8447 - Fairchild

NDH8447 P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook co.

Features

-4.4A, -30V. RDS(ON) = 0.053 @ VGS = -10V RDS(ON) = 0.095Ω @ VGS = -4.5V High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 SuperSOTTM-8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD T A = 25°C unless otherwise note NDH8447 -30 -20 (Note 1a) Units V V A -4.4 -20 Maximum Power Dissipa.