SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as batte.
7.1 A, 20 V. RDS(ON) = 0.020 Ω @ VGS = 4.5 V RDS(ON) = 0.025 Ω @ VGS = 2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ___________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings T A = 25°C unless otherwise note Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NDH8301N |
Fairchild |
Dual N-Channel MOSFET | |
2 | NDH8303N |
Fairchild |
Dual N-Channel MOSFET | |
3 | NDH8304 |
Fairchild |
Dual P-Channel MOSFET | |
4 | NDH8304P |
Fairchild |
Dual P-Channel MOSFET | |
5 | NDH831N |
Fairchild |
N-Channel MOSFET | |
6 | NDH8320C |
Fairchild |
Dual N&P-Channel MOSFET | |
7 | NDH8321C |
Fairchild |
Dual N&P-Channel MOSFET | |
8 | NDH832P |
Fairchild |
P-Channel MOSFET | |
9 | NDH834P |
Fairchild |
P-Channel MOSFET | |
10 | NDH8436 |
Fairchild |
N-Channel MOSFET | |
11 | NDH8447 |
Fairchild |
P-Channel MOSFET | |
12 | NDH8502P |
Fairchild |
Dual P-Channel MOSFET |