These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook co.
-4.2A, -20V. RDS(ON) = 0.06Ω @ VGS = -4.5V RDS(ON) = 0.08Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability. ___________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD T A = 25°C unless otherwise noted NDH832P -20 -8 (Note 1a) Units V V A -4.2 -15 Maximum Power Dissipation (Note 1a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NDH8320C |
Fairchild |
Dual N&P-Channel MOSFET | |
2 | NDH8321C |
Fairchild |
Dual N&P-Channel MOSFET | |
3 | NDH8301N |
Fairchild |
Dual N-Channel MOSFET | |
4 | NDH8303N |
Fairchild |
Dual N-Channel MOSFET | |
5 | NDH8304 |
Fairchild |
Dual P-Channel MOSFET | |
6 | NDH8304P |
Fairchild |
Dual P-Channel MOSFET | |
7 | NDH831N |
Fairchild |
N-Channel MOSFET | |
8 | NDH833N |
Fairchild |
N-Channel MOSFET | |
9 | NDH834P |
Fairchild |
P-Channel MOSFET | |
10 | NDH8436 |
Fairchild |
N-Channel MOSFET | |
11 | NDH8447 |
Fairchild |
P-Channel MOSFET | |
12 | NDH8502P |
Fairchild |
Dual P-Channel MOSFET |