NCE85H21T - NCE Power

NCE85H21T NCE N-Channel Enhancement Mode Power MOSFET

The NCE85H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features ● VDSS =85V,ID =210A RDS(ON) < 4.5mΩ @ VGS=10V Schematic diagram ● Good stability and uniformity with high EAS ● Special process technology for high.

Features

● VDSS =85V,ID =210A RDS(ON) < 4.5mΩ @ VGS=10V Schematic diagram
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package NCE85H21T N.