NCE8580D - NCE Power Semiconductor

NCE8580D N-Channel Enhancement Mode Power MOSFET

The NCE8580D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =85V,ID =80A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage .

Features

● VDS =85V,ID =80A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Special designed for convertors and power controls
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Application
● Power switching application
● Hard switched and High frequency circuits
● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment TO-263-2L top view Package Marking and Orde.