NCE8050A - NCE Power Semiconductor

NCE8050A N-Channel Enhancement Mode Power MOSFET

The NCE8050A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =80V,ID =50A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformi.

Features

● VDS =80V,ID =50A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Pack.