NCE80H12 - NCE Power

NCE80H12 NCE N-Channel Enhancement Mode Power MOSFET

The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =80V,ID =120A RDS(ON) <6mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and un.

Features

● VDS =80V,ID =120A RDS(ON) <6mΩ @ VGS=10V Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220 top view Package Marking And Ordering Information Device Marking Device Device Package NCE80H12 .