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NCE80H12 |
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| Part Number | NCE80H12 |
| Manufacturer | NCE Power |
| Description | The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =80V,ID =120A RDS(O... |
| Features |
● VDS =80V,ID =120A RDS(ON) <6mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220 top view Package Marking And Ordering Information Device Marking Device Device Package NCE80H12 ... |
| Document |
 NCE80H12 Data Sheet
PDF 388.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NCE80H11 |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 2 | NCE80H11D |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 3 | NCE80H11H |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 4 | NCE80H12H |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | NCE80H14 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|