Pin Name No. I/O Description INA INB VDDI 1 Input A non-inverting gate driver input that defines OUTA. It has an equivalent pull−down resistor of 125 kW to ensure that output is low in the absence of an input signal. A positive or negative going pulse with pulse width longer than maximum value of tMIN2 is required at INA before OUTA reacts. The inpu.
• High Peak Output Current (±6.5 A
*, ±3.5 A
*)
• Configurable as a Dual Low−Side or Dual High−Side or Half−Bridge
Driver
• Programmable Overlap or Dead Time control
• Disable Pin to Turn Off Outputs for Power Sequencing
• ANB Function to Offer Flexibility to Set up the Driver as
Half−bridge Driver Operating with a Single Input Signal
• IGBT/MOSFET Gate Clamping during Short Circuit
• Short Propagation Delays with Accurate Matching
• Tight UVLO Thresholds on all Power Supplies
• 3.3 V, 5 V, and 15 V Logic Input
• 2.5 or 5 kVrms
* Galvanic Isolation from Input to each Output
and 1.5 kVrms Differen.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NCD57253 |
ON Semiconductor |
Isolated Dual Channel IGBT/MOSFET Gate Driver | |
2 | NCD57255 |
ON Semiconductor |
Isolated Dual Channel IGBT/MOSFET Gate Driver | |
3 | NCD57256 |
ON Semiconductor |
Isolated Dual Channel IGBT/MOSFET Gate Driver | |
4 | NCD57200 |
ON Semiconductor |
Half Bridge Gate Driver | |
5 | NCD57201 |
ON Semiconductor |
Half Bridge Gate Driver | |
6 | NCD5700 |
ON Semiconductor |
High Current IGBT Gate Driver | |
7 | NCD57000 |
ON Semiconductor |
Isolated High Current IGBT Gate Driver | |
8 | NCD57001 |
ON Semiconductor |
Isolated High Current IGBT Gate Driver | |
9 | NCD57001F |
ON Semiconductor |
High Current IGBT Gate Driver | |
10 | NCD5701A |
ON Semiconductor |
High Current IGBT Gate Drivers | |
11 | NCD5701B |
ON Semiconductor |
High Current IGBT Gate Drivers | |
12 | NCD5701C |
ON Semiconductor |
High Current IGBT Gate Drivers |