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Pin Name No. I/O Description VDD HIN LIN GND 1 Power Low side and main power supply. A good quality bypassing capacitor is required from this pin to GND and should be placed close to the pins for best results. The under voltage lockout (UVLO) circuit enables the device to operate at power on when a typical supply voltage higher than VUVLO1−OUT−ON is .
include two independent inputs, accurate asymmetric UVLOs, and short and matched propagation delays. The NCx57201 operates with its VDD/VBS up to 20 V.
NOTE: x = D or V
Features
• High Peak Output Current (+1.9 A/−2.3 A)
• Low Output Voltage Drop for Enhanced IGBT Conduction
• Floating Channel for Bootstrap Operation up to +800 V
• CMTI up to 100 kV/ms
• Reliable Operation for VS Negative Swing to −800 V
• VDD & VBS Supply Range up to 20 V
• 3.3 V, 5 V, and 15 V Logic Input
• Asymmetric Under Voltage Lockout Thresholds for High Side and
Low Side
• Matched Propagation Delay 90 ns
• Built−in 20 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NCD57200 |
ON Semiconductor |
Half Bridge Gate Driver |
|
| 2 | NCD57252 |
ON Semiconductor |
Isolated Dual Channel IGBT/MOSFET Gate Driver |
|
| 3 | NCD57253 |
ON Semiconductor |
Isolated Dual Channel IGBT/MOSFET Gate Driver |
|
| 4 | NCD57255 |
ON Semiconductor |
Isolated Dual Channel IGBT/MOSFET Gate Driver |
|
| 5 | NCD57256 |
ON Semiconductor |
Isolated Dual Channel IGBT/MOSFET Gate Driver |
|
| 6 | NCD5700 |
ON Semiconductor |
High Current IGBT Gate Driver |
|
| 7 | NCD57000 |
ON Semiconductor |
Isolated High Current IGBT Gate Driver |
|
| 8 | NCD57001 |
ON Semiconductor |
Isolated High Current IGBT Gate Driver |
|
| 9 | NCD57001F |
ON Semiconductor |
High Current IGBT Gate Driver |
|
| 10 | NCD5701A |
ON Semiconductor |
High Current IGBT Gate Drivers |
|
| 11 | NCD5701B |
ON Semiconductor |
High Current IGBT Gate Drivers |
|
| 12 | NCD5701C |
ON Semiconductor |
High Current IGBT Gate Drivers |
|