Pin Name No. I/O/x Description VIN 1 I Input signal to control the output. In applications which require galvanic isolation, VIN is generated at the opto output, the pulse transformer secondary or the digital isolator output. There is a signal inversion from VIN to VO (VOH/VOL). VIN is internally clamped to 5.5 V and has a pull− up resistor of 1 MW to en.
include accurate Under−voltage−lockout (UVLO), desaturation protection (DESAT) and Active Low FAULT output. The drivers also feature an accurate 5.0 V output. The drivers are designed to accommodate a wide voltage range of bias supplies including unipolar and NCD5701B even bipolar voltages.
Depending on the pin configuration the devices also include Active Miller Clamp (NCD5701A) and separate high and low (VOH and VOL) driver outputs for system design convenience (NCD5701C).
All three available pin configuration variants have 8−pin SOIC package.
Features
• High Current Output (+4/−6 A) at IGBT.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NCD5701B |
ON Semiconductor |
High Current IGBT Gate Drivers | |
2 | NCD5701C |
ON Semiconductor |
High Current IGBT Gate Drivers | |
3 | NCD5700 |
ON Semiconductor |
High Current IGBT Gate Driver | |
4 | NCD57000 |
ON Semiconductor |
Isolated High Current IGBT Gate Driver | |
5 | NCD57001 |
ON Semiconductor |
Isolated High Current IGBT Gate Driver | |
6 | NCD57001F |
ON Semiconductor |
High Current IGBT Gate Driver | |
7 | NCD5702 |
ON Semiconductor |
High Current IGBT Gate Driver | |
8 | NCD5703A |
ON Semiconductor |
High Current IGBT Gate Drivers | |
9 | NCD5703B |
ON Semiconductor |
High Current IGBT Gate Drivers | |
10 | NCD5703C |
ON Semiconductor |
High Current IGBT Gate Drivers | |
11 | NCD5705B |
ON Semiconductor |
High Current IGBT Gate Drivers | |
12 | NCD5707A |
ON Semiconductor |
High Current IGBT/MOSFET Gate Drivers |