The MX29F1615 is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. MXIC's Flash memories offer the most cost-effective and reliable read/ write non-volatile random access memory. The MX29F1615 is packaged in 42-pin PDIP. It is designed to be reprogrammed and in standard EPROM programmers. The standard MX29F1615 offers access times as fa.
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5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles Fast access time: 90/100/120ns Auto Erase and Auto Program Algorithms - Automatically erases the whole chip - Automatically programs and verifies data at specified addresses Status Register feature for detection of program or erase cycle completion Low VCC write inhibit is equal to or less than 3.2V
• Software and hardware data protection
• Page program operation
- Internal address and data latches for 64 words per page - Page programming time: 0.9ms typical Low power dissipation - 30mA typical active curre.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MX29F1610A |
Macronix International |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM | |
2 | MX29F1611 |
Macronix International |
16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM | |
3 | MX29F100B |
Macronix International |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY | |
4 | MX29F100T |
Macronix International |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY | |
5 | MX29F001B |
Macronix |
1M bit CMOS Flash Memory | |
6 | MX29F001BTC |
Macronix |
1M bit CMOS Flash Memory | |
7 | MX29F001T |
Macronix |
1M bit CMOS Flash Memory | |
8 | MX29F002 |
Macronix |
2M-BIT[256K x 8]CMOS FLASH MEMORY | |
9 | MX29F002N |
Macronix |
2M-BIT[256K x 8]CMOS FLASH MEMORY | |
10 | MX29F022 |
Macronix |
2M-BIT[256K x 8]CMOS FLASH MEMORY | |
11 | MX29F040 |
Macronix International |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY | |
12 | MX29F040C |
Macronix International |
4M-BIT [512K x 8] SINGLE VOLTAGE 5V ONLY FLASH MEMORY |