The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers. The standard.
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• 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current(5MHz) - 1uA typical standby current Command register architecture - Byte/ Word Programming (7us/ 12us typical) - Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x1) Auto Erase (chip) and Auto Program - Automatically erase any combination of sectors or with Erase Suspend capability. - Automatically program and verify data at specified address Status Reply - Data polling & Toggle bit for detection of program and erase cycle co.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MX29F100B |
Macronix International |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY | |
2 | MX29F1610A |
Macronix International |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM | |
3 | MX29F1611 |
Macronix International |
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4 | MX29F1615 |
Macronix International |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM | |
5 | MX29F001B |
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6 | MX29F001BTC |
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7 | MX29F001T |
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8 | MX29F002 |
Macronix |
2M-BIT[256K x 8]CMOS FLASH MEMORY | |
9 | MX29F002N |
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2M-BIT[256K x 8]CMOS FLASH MEMORY | |
10 | MX29F022 |
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2M-BIT[256K x 8]CMOS FLASH MEMORY | |
11 | MX29F040 |
Macronix International |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY | |
12 | MX29F040C |
Macronix International |
4M-BIT [512K x 8] SINGLE VOLTAGE 5V ONLY FLASH MEMORY |