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MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Programming and erasing voltage 5V ± 10% • Command register architecture - Byte Programming (7us typical) - Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byt.
• 262,144x 8 only
• Fast access time: 55/70/90/120ns
• Low power consumption
- 30mA maximum active current(5MHz) - 1uA typical standby current
• Programming and erasing voltage 5V ± 10%
• Command register architecture - Byte Programming (7us typical) - Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte x1, and 64K-Byte x 3)
• Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors or the whole chip with Erase Suspend capability. - Automatically programs and verifies data at specified address
• Erase Suspend/Erase Resume - Suspends an erase operation to read d.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MX29F002 |
Macronix |
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| 2 | MX29F001B |
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| 3 | MX29F001BTC |
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| 4 | MX29F001T |
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| 5 | MX29F022 |
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| 7 | MX29F040C |
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| 8 | MX29F100B |
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| 9 | MX29F100T |
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| 10 | MX29F1610A |
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| 12 | MX29F1615 |
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