MTP452M3 - CYStech Electronics

MTP452M3 30V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp. 30V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C426M3 Issued Date : 2012.02.07 Revised Date : Page No. : 1/8 MTP452M3 Features • Single Drive Requirement • Low On-resistance, RDS(ON)=50mΩ(typ.)@VGS=-10V, ID=-3.2A RDS(ON)=72mΩ(typ.)@VGS=-4.5V, ID=-2.6A • Ultra High Speed Switching • Pb-free package Symbol MTP452M3 Outline SOT-.

Features

• Single Drive Requirement
• Low On-resistance, RDS(ON)=50mΩ(typ.)@VGS=-10V, ID=-3.2A RDS(ON)=72mΩ(typ.)@VGS=-4.5V, ID=-2.6A
• Ultra High Speed Switching
• Pb-free package Symbol MTP452M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) Operating Junction and Storage Temperature Note :
*1. Pulse width limited by maximum junction tem.