MTP425I3 - CYStech Electronics

MTP425I3 P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C391I3 Issued Date : 2012.11.27 Revised Date : Page No. : 1/8 MTP425I3 Features • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package BVDSS ID RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-5V, ID=-7A -30V -50A 10mΩ(typ) 14mΩ(typ).

Features

• Single Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free lead plating package BVDSS ID RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-5V, ID=-7A -30V -50A 10mΩ(typ) 14mΩ(typ) Symbol MTP425I3 Outline TO-251AB TO-251S G：Gate D：Drain S：Source G D S G D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=-10V, TC=25°C Continuous Drain Current @VGS=-10V, TC=100°C Continuous Drain Current @VGS=-10V, TA=25°C Continuous Drain Current @VGS=-10V, TA=100°C Pulsed Drain Current TC=25℃ TC=.