MTP452L3 - CYStech Electronics

MTP452L3 P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C400L3 Issued Date : 2009.06.22 Revised Date : Page No. : 1/7 MTP452L3 Features • Simple Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package BVDSS RDSON(MAX) ID -30V 55mΩ -6A Symbol MTP452L3 Outline SOT-223 D S G：Gate D：Drain .

Features

• Simple Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free lead plating package BVDSS RDSON(MAX) ID -30V 55mΩ -6A Symbol MTP452L3 Outline SOT-223 D S G：Gate D：Drain S：Source D G Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-to-ambient, max Note :
*1. Pulse width limited by maximum jun.