This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequ.
faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies).
Features
• 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS = 5 V
• Critical DC electrical parameters specified at elevated temperature.
• Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V.
• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
• 175°C maximum junction temperature rating.
D
G D S
TO-220
G
Absolute Maximum Ratings .
MTP3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel TO−220 This Power MOSFET is designed to.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTP3055V |
Fairchild Semiconductor |
N-Channel Enhancement Mode Field Effect Transistor | |
2 | MTP3055V |
ON Semiconductor |
Power MOSFET | |
3 | MTP3055 |
Motorola |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM | |
4 | MTP3055 |
ST Microelectronics |
N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET | |
5 | MTP3055A |
STMicroelectronics |
N-Channel MOSFET | |
6 | MTP3055AFI |
STMicroelectronics |
N-Channel MOSFET | |
7 | MTP3055E |
ST Microelectronics |
N-CHANNEL MOSFET | |
8 | MTP30008 |
nELL |
Three-Phase Bridge Rectifier | |
9 | MTP30010 |
nELL |
Three-Phase Bridge Rectifier | |
10 | MTP30012 |
nELL |
Three-Phase Bridge Rectifier | |
11 | MTP30016 |
nELL |
Three-Phase Bridge Rectifier | |
12 | MTP30018 |
nELL |
Three-Phase Bridge Rectifier |