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MTP2P50EG Power MOSFET 2 Amps, 500 Volts, P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• This is a Pb−Free Device
*
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MW)
Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms)
Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 ms)
Total Power Dissip.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTP2P50E |
ON Semiconductor |
Power MOSFET |
|
| 2 | MTP2P50E |
Motorola |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS |
|
| 3 | MTP2P50 |
Motorola |
POWER FIELD EFFECT TRANSISTOR |
|
| 4 | MTP2P45 |
Motorola |
POWER FIELD EFFECT TRANSISTOR |
|
| 5 | MTP2010J3 |
CYStech Electronics |
P-Channel Logic Level Enhancement Mode MOSFET |
|
| 6 | MTP2071M3 |
CYStech Electronics |
20V P-CHANNEL Enhancement Mode MOSFET |
|
| 7 | MTP20N06V |
Motorola |
TMOS POWER FET 20 AMPERES 60 VOLTS |
|
| 8 | MTP20N06V |
ON Semiconductor |
Power MOSFET |
|
| 9 | MTP20N08 |
Fairchild Semiconductor |
(MTP20N08 / MTP20N10) N-Channel Power MOSFETs |
|
| 10 | MTP20N10 |
Fairchild Semiconductor |
(MTP20N08 / MTP20N10) N-Channel Power MOSFETs |
|
| 11 | MTP20N20E |
Motorola |
TMOS POWER FET 20 AMPERES 200 VOLTS |
|
| 12 | MTP20P06 |
Motorola Semiconductor |
Power Field Effect Transistor |
|