MTP2P50EG |
Part Number | MTP2P50EG |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | MTP2P50EG Power MOSFET 2 Amps, 500 Volts, P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance ... |
Features |
• Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • This is a Pb−Free Device* MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 ms) Total Power Dissip... |
Document |
MTP2P50EG Data Sheet
PDF 84.99KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | MTP2P50E |
ON Semiconductor |
Power MOSFET | |
2 | MTP2P50E |
Motorola |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS | |
3 | MTP2P50 |
Motorola |
POWER FIELD EFFECT TRANSISTOR | |
4 | MTP2P45 |
Motorola |
POWER FIELD EFFECT TRANSISTOR | |
5 | MTP2010J3 |
CYStech Electronics |
P-Channel Logic Level Enhancement Mode MOSFET |