MTP15N06V - Motorola

MTP15N06V TMOS POWER FET

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP15N06V TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS.

Features

of TMOS V
• On
  –resistance Area Product about One
  –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E
  –FET Predecessors Features Common to TMOS V and TMOS E
  –FETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E
  –FET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –Source Voltage Drain
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –Source Voltage — Continuous Gate
  –Source Voltage — Single Pulse (tp ≤ 50 µs) Drain Current — Continuous @ 25°C Drain Current — C.